OSG65R069HS

The OSG65R069HS MOSFET utilizes charge balancing techniques to achieve low on-resistance and low gate charge. It is designed to minimize conduction losses and provide excellent switching performance and robust avalanche capability.

The OSG65R069HS is optimized for extreme switching performance to minimize switching losses. It is tailored for high power density applications to meet the highest efficiency standards.

Product parameters:

VDS, min @ Tj(max): 700V

ID, pulse: 159A

RDS(ON) , max @ VGS=10V: 69mΩ

Qg: 60.5nC