
NCT218 T2P
July 11, 2023
ES3J [diode 600v]
July 12, 2023IXFP4N85X is a power MOSFET for use on the APW series of PSUs.
Product parameters:
- Transistor Polarity: N-Channel
- Single channel
- Destruction voltage between drain and source: 850V
- Continuous drain current: 3.5A
- Resistance between drain and source: 2.5Ω
- Voltage between gate and source: -30V, +30V
- Threshold voltage between gate and source: 3V
- Qg – Gate charge: 7nC
- Working temperature: -55℃ to +150℃
- Power Consumption: 150 W
Weight | 0.00025 lbs |
---|---|
Dimensions | 1 × 1 × 1 in |
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