
Inductor 100
December 26, 2022AONS32311 N-Channel MOSFET The AONS32311 N-ch MOS chip uses trench power MOSFET technology with low RDS(ON), low gate charge, and high current capability. Replacement and repair of MOS tubes for hashboards.
Specification:
VDS: 30V
ID (at VGS=10V): 220A
RDS(ON) (at VGS=10V): < 1.35mΩ
RDS(ON) (at VGS=4.5V): < 1.9mΩ
Package: DFN 5*6
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